MoS 2 transistors with 1-nanometer gate lengths
Lawrence Berkeley National Laboratory · University of California, Berkeley · +2 more institutions
Abstract
A flatter route to shorter channels High-performance silicon transistors can have gate lengths as short as 5 nm before source-drain tunneling and loss of electrostatic control lead to unacceptable leakage current when the device is off. Desai et al. explored the use of MoS 2 as a channel material, given that its electronic properties as thin layers should limit such leakage. A transistor with a 1-nm physical gate was constructed with a MoS 2 bilayer channel and a single-walled carbon nanotube gate electrode. Excellent switching characteristics and an on-off state current ratio of ∼10 6 were observed. Science , this issue p. 99
Citation impact
- FWCI
- 73.01
- Percentile
- 100%
- References
- 45
Authors
12- SBSujay B. Desai
Lawrence Berkeley National Laboratory, University of California, Berkeley
- SRSurabhi R. Madhvapathy
Lawrence Berkeley National Laboratory, University of California, Berkeley
- ABAngada B. Sachid
Lawrence Berkeley National Laboratory, University of California, Berkeley
- JPJuan Pablo Llinas
Lawrence Berkeley National Laboratory, University of California, Berkeley
- QWQingxiao Wang
The University of Texas at Dallas
Topics & keywords
- Transistor
- Materials science
- Optoelectronics
- Leakage (economics)
- Quantum tunnelling
- Nanometre
- Silicon
- Electrode