Graphene‐ β ‐Ga 2 O 3 Heterojunction for Highly Sensitive Deep UV Photodetector Application
Hefei University of Technology
Indexed incrossrefpubmed
Abstract
A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (β-Ga2O3) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is…
Citation impact
709
total citations
- FWCI
- 21.87
- Percentile
- 100%
- References
- 33
Citations per year
Authors
7Topics & keywords
Topics
Keywords
- Photodetector
- Materials science
- Optoelectronics
- Heterojunction
- Graphene
- Wafer
- Reproducibility
- Wavelength
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