High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe 2 FETs
Hong Kong Polytechnic University · Shenzhen Polytechnic University · +5 more institutions
Abstract
The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2. The high room-temperature electron mobility and near-infrared photoresponse, together with much better air-stability, make PtSe2 a versatile electronic 2D layered material. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please…
Citation impact
- FWCI
- 25.61
- Percentile
- 100%
- References
- 67
Authors
11- YZYuda Zhao
Hong Kong Polytechnic University, Shenzhen Polytechnic University
- JQJingsi Qiao
Renmin University of China, Hong Kong Polytechnic University
- ZYZhihao Yu
Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- PYPeng Yu
Nanyang Technological University
- KXKang Xu
Hong Kong Polytechnic University
Topics & keywords
- Materials science
- Semiconductor
- Electron mobility
- Semimetal
- Density functional theory
- Optoelectronics
- Electron
- Infrared