articleThe Journal of Physical Chemistry LettersJan 10, 2017GREEN OA

High Defect Tolerance in Lead Halide Perovskite CsPbBr 3

Lawrence Berkeley National Laboratory

PubMed
Indexed incrossrefpubmed

Abstract

The formation energies and charge-transition levels of intrinsic point defects in lead halide perovskite CsPbBr3 are studied from first-principles calculations. It is shown that the formation energy of dominant defect under Br-rich growth condition is much lower than that under moderate or Br-poor conditions. Thus avoiding the Br-rich condition can help to reduce the defect concentration. Interestingly, CsPbBr3 is found to be highly defect-tolerant in terms of its electronic structure. Most of the intrinsic defects induce shallow transition levels. Only a few defects with high formation energies can create deep transition levels. Therefore, CsPbBr3 can maintain its good electronic quality despite the presence…

Citation impact

1,248
total citations
FWCI
57.14
Percentile
100%
References
44
Citations per year

Authors

2

Topics & keywords

Keywords
  • Crystallographic defect
  • Halide
  • Perovskite (structure)
  • Valence (chemistry)
  • Materials science
  • Antibonding molecular orbital
  • Conduction band
  • Chemical physics
No related works found for this paper.

Funding