High Defect Tolerance in Lead Halide Perovskite CsPbBr 3
Lawrence Berkeley National Laboratory
Abstract
The formation energies and charge-transition levels of intrinsic point defects in lead halide perovskite CsPbBr3 are studied from first-principles calculations. It is shown that the formation energy of dominant defect under Br-rich growth condition is much lower than that under moderate or Br-poor conditions. Thus avoiding the Br-rich condition can help to reduce the defect concentration. Interestingly, CsPbBr3 is found to be highly defect-tolerant in terms of its electronic structure. Most of the intrinsic defects induce shallow transition levels. Only a few defects with high formation energies can create deep transition levels. Therefore, CsPbBr3 can maintain its good electronic quality despite the presence…
Citation impact
- FWCI
- 57.14
- Percentile
- 100%
- References
- 44
Authors
2Topics & keywords
- Crystallographic defect
- Halide
- Perovskite (structure)
- Valence (chemistry)
- Materials science
- Antibonding molecular orbital
- Conduction band
- Chemical physics