articleIEEE Transactions on Industrial ElectronicsJan 17, 2017Closed access

Review of Silicon Carbide Power Devices and Their Applications

GE Global Research (United States) · North Carolina State University · +3 more institutions

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Abstract

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

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1,634
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FWCI
49.98
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100%
References
101
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Authors

4

Topics & keywords

Keywords
  • Silicon carbide
  • Materials science
  • Power semiconductor device
  • Silicon
  • Engineering physics
  • Power (physics)
  • Wide-bandgap semiconductor
  • Voltage
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