Review of Silicon Carbide Power Devices and Their Applications
GE Global Research (United States) · North Carolina State University · +3 more institutions
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Abstract
Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.
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1,634
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- FWCI
- 49.98
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- 100%
- References
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Authors
4Topics & keywords
Topics
Keywords
- Silicon carbide
- Materials science
- Power semiconductor device
- Silicon
- Engineering physics
- Power (physics)
- Wide-bandgap semiconductor
- Voltage
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