Excitonic Linewidth Approaching the Homogeneous Limit in      MoS    2     -Based van der Waals Heterostructures

Cadiz, Fabian; Courtade, Emmanuel; Robert, Cédric; Wang, Gang; Shen, Yuxia; Cai, H.; Taniguchi, Takashi; Watanabe, Kenji; Carrère, H.; Lagarde, Delphine; Manca, Marco; Amand, T.; Renucci, P.; Tongay, Sefaattin; Marie, X.; Urbaszek, Bernhard

doi:10.1103/physrevx.7.021026

articlePhysical Review XMay 18, 2017LVGOLD OA

Excitonic Linewidth Approaching the Homogeneous Limit in MoS 2 -Based van der Waals Heterostructures

FCFabian Cadiz ECEmmanuel Courtade CRCédric Robert GWGang Wang YSYuxia Shen

Centre National de la Recherche Scientifique · Université Toulouse III - Paul Sabatier · +4 more institutions

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Abstract

Transition-metal dichalcogenides are a class of two-dimensional materials that offer potential for developing flat and flexible transistors and optoelectronics, but their quality is often hindered by traditional methods for depositing these atomically flat materials. An experiment demonstrates a new technique that leads to higher quality crystals and better access to studying their properties.

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Topics

Keywords

Laser linewidth
Exciton
Photoluminescence
Materials science
Condensed matter physics
Physics
Optics
Optoelectronics

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