articleIEEE Transactions on Electron DevicesFeb 27, 2017Closed access

GaN-on-Si Power Technology: Devices and Applications

Hong Kong University of Science and Technology · Infineon Technologies (Austria) · +3 more institutions

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Abstract

In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.

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1,582
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93.22
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100%
References
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Authors

7

Topics & keywords

Keywords
  • Reliability (semiconductor)
  • MOSFET
  • Power semiconductor device
  • Power electronics
  • Power MOSFET
  • Commercialization
  • Electrical engineering
  • Electronics
UN Sustainable Development Goals
  • Affordable and clean energy
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