SPICE Model of Memristor with Nonlinear Dopant Drift

Abstract. A mathematical model of the prototype of mem-ristor, manufactured in 2008 in Hewlett-Packard Labs, is described in the paper. It is shown that the hitherto pub-lished approaches to the modeling of boundary conditions need not conform with the requirements for the behavior of a practical circuit element. The described SPICE model of the memristor is thus constructed as an open model, ena-bling additional modifications of non-linear boundary conditions. Its functionality is illustrated on computer simulations.