Correction: Corrigendum: The work mechanism and sub-bandgap-voltage electroluminescence in inverted quantum dot light-emitting diodes

Through introducing a probe layer of bis(4,6-difluorophenylpyridinato-N,C2)picolinatoiridium (FIrpic) between QD emission layer and 4, 4-N, N- dicarbazole-biphenyl (CBP) hole transport layer, we successfully demonstrate that the electroluminescence (EL) mechanism of the inverted quantum dot light-emitting diodes (QD-LEDs) with a ZnO nanoparticle electron injection/transport layer should be direct charge-injection from charge transport layers into the QDs. Further, the EL from QD-LEDs at sub-bandgap drive voltages is achieved, which is in contrast to the general device in which the turn-on voltage is generally equal to or greater than its bandgap voltage (the bandgap energy divided by the electron charge). This…