Defect-Assisted Photoinduced Halide Segregation in Mixed-Halide Perovskite Thin Films
Italian Institute of Technology · Center for Nano Science and Technology · +3 more institutions
Abstract
Solution-processable metal halide perovskites show immense promise for use in photovoltaics and other optoelectronic applications. The ability to tune their bandgap by alloying various halide anions (for example, in CH3NH3Pb(I1–x Br x )3, 0 < x < 1) is however hampered by the reversible photoinduced formation of sub-bandgap emissive states. We find that ion segregation takes place via halide defects, resulting in iodide-rich low-bandgap regions close to the illuminated surface of the film. This segregation may be driven by the strong gradient in carrier generation rate through the thickness of these strongly absorbing materials. Once returned to the dark, entropically driven intermixing of halides…
Citation impact
- FWCI
- 29.81
- Percentile
- 100%
- References
- 36
Authors
15- AJAlex J. BarkerCorresponding
Italian Institute of Technology, Center for Nano Science and Technology
- ASAditya Sadhanala
University of Cambridge
- FDFelix Deschler
University of Cambridge
- MGMarina Gandini
Italian Institute of Technology, Center for Nano Science and Technology
- SPSatyaprasad P. Senanayak
University of Cambridge
Topics & keywords
- Halide
- Perovskite (structure)
- Materials science
- Band gap
- Photovoltaics
- Iodide
- Optoelectronics
- Thin film
- Affordable and clean energy