Spintronics based random access memory: a review

This article reviews spintronics based memories, in particular, magnetic random access memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale in 2006, the MRAM has grown to a 256 Mb product of Everspin in 2016. During this period, MRAM has overcome several hurdles and have reached a stage, where the potential for MRAM is very promising. One of the main hurdles that the MRAM overcome between 2006 and 2016 is the way the information is written. The 4 Mb MRAM used a magnetic field based switching technology that would be almost impossible to scale below 100 nm. The 256 Mb MRAM, on the other hand uses a different writing mechanism based on Spin Transfer Torque (STT), which is scalable…

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  Nanyang Technological University