A highly flexible and sensitive piezoresistive sensor based on MXene with greatly changed interlayer distances
Wuhan National Laboratory for Optoelectronics · Huazhong University of Science and Technology · +5 more institutions
Abstract
Since the successful synthesis of the first MXenes, application developments of this new family of two-dimensional materials on energy storage, electromagnetic interference shielding, transparent conductive electrodes and field-effect transistors, and other applications have been widely reported. However, no one has found or used the basic characteristics of greatly changed interlayer distances of MXene under an external pressure for a real application. Here we report a highly flexible and sensitive piezoresistive sensor based on this essential characteristics. An in situ transmission electron microscopy study directly illustrates the characteristics of greatly changed interlayer distances under an external…
Citation impact
- FWCI
- 21.95
- Percentile
- 100%
- References
- 39
Authors
8- YMYanan MaCorresponding
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
- NLNishuang Liu
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
- LLLuying Li
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
- XHXiaokang Hu
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
- ZZZhengguang Zou
Guangxi University, Guilin University of Technology
Topics & keywords
- Piezoresistive effect
- MXenes
- Gauge factor
- Materials science
- Electrode
- Pressure sensor
- Optoelectronics
- Bending
- Affordable and clean energy