Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
Shenzhen University · Chinese Academy of Sciences · +6 more institutions
Abstract
Fast phase change with no preconditions Random access memory (RAM) devices that rely on phase changes are primarily limited by the speed of crystallization. Rao et al. combined theory with a simple set of selection criteria to isolate a scandium-doped antimony telluride (SST) with a subnanosecond crystallization speed (see the Perspective by Akola and Jones). They synthesized SST and constructed a RAM device with a 700-picosecond writing speed. This is an order of magnitude faster than previous phase-change memory devices and competitive with consumer dynamic access, static random access, and flash memory. Science , this issue p. 1423 ; see also p. 1386
Citation impact
- FWCI
- 24.49
- Percentile
- 100%
- References
- 49
Authors
12- FRFeng RaoCorresponding
Shenzhen University, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology
- KDKeyuan DingCorresponding
Shenzhen University, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology
- YZYuxing ZhouCorresponding
Xi'an Jiaotong University
- YZYonghui Zheng
Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology
- MXMengjiao Xia
Zhengzhou University
Topics & keywords
- Picosecond
- Phase-change memory
- Computer science
- Nucleation
- Random access
- Random access memory
- Flash (photography)
- Flash memory