Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS 2 Continuous Films
Chinese Academy of Sciences · Institute of Physics · +6 more institutions
Abstract
Large scale epitaxial growth and transfer of monolayer MoS2 has attracted great attention in recent years. Here, we report the wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS2 films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method. The epitaxial film is of high quality and stitched by many 0°, 60° domains and 60°-domain boundaries. Moreover, such wafer-scale monolayer MoS2 films can be transferred and stacked by a simple stamp-transfer process, and the substrate is reusable for subsequent growth. Our progress would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.
Citation impact
- FWCI
- 19.52
- Percentile
- 100%
- References
- 27
Authors
22- HYHua YuCorresponding
Chinese Academy of Sciences, Institute of Physics
- MLMengzhou Liao
Chinese Academy of Sciences, Institute of Physics
- WZWenjuan Zhao
Chinese Academy of Sciences, Institute of Physics
- GLGuodong Liu
Chinese Academy of Sciences, Institute of Physics
- XZXumin Zhou
Chinese Academy of Sciences, Institute of Physics
Topics & keywords
- Monolayer
- Wafer
- Epitaxy
- Materials science
- Chemical vapor deposition
- Nanotechnology
- Fabrication
- Sapphire