Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower‐bandgap cousins in high‐power and RF electronics, as well as in deep‐UV optoelectronics, quantum information, and extreme‐environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga 2 O 3 , advanced in maturity to the point…

• NS
  National Science Foundation

  Awards: ECCS‐1641056, DMR‐1434854
• NN
  National Nuclear Security Administration

  Award: DE‐NA‐0003525
• AF
  Air Force Office of Scientific Research