Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Institute for Microelectronics and Microsystems · STMicroelectronics (Italy)
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Abstract
No abstract available for this paper.
Citation impact
562
total citations
- FWCI
- 20.03
- Percentile
- 100%
- References
- 140
Citations per year
Authors
7- FRFabrizio RoccaforteCorresponding
Institute for Microelectronics and Microsystems
- PFPatrick Fiorenza
Institute for Microelectronics and Microsystems
- GGGiuseppe Greco
Institute for Microelectronics and Microsystems
- RLRaffaella Lo Nigro
Institute for Microelectronics and Microsystems
- FGFilippo Giannazzo
Institute for Microelectronics and Microsystems
Topics & keywords
Topics
Keywords
- Silicon carbide
- Gallium nitride
- Materials science
- Engineering physics
- Wide-bandgap semiconductor
- Power semiconductor device
- Ohmic contact
- Optoelectronics
UN Sustainable Development Goals
- Affordable and clean energy
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