articleNano LettersDec 13, 2017HYBRID OA

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

The University of Texas at Austin · Peking University · +3 more institutions

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Abstract

Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience including topologically protected charge transport,1,2 spatially separated excitons,3 and strongly anisotropic heat transport.4 Here, we report the intriguing observation of stable nonvolatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M = Mo, W; and X = S, Se) transitional metal dichalcogenides (TMDs),5 which alludes to the universality of this phenomenon in TMD monolayers and offers forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament, and interfacial redox in…

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Authors

9

Topics & keywords

Keywords
  • Transition metal
  • Materials science
  • Nanotechnology
  • Non-volatile memory
  • Optoelectronics
  • Engineering physics
  • Chemical physics
  • Chemistry
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