Recent progress in 2D group-VA semiconductors: from theory to experiment

Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the…

• NS
  National Science Foundation

  Award: BK20140769
• UD
  U.S. Department of Defense

  Award: W911NF-15-1-0650
• NN
  National Natural Science Foundation of China

  Awards: 51572290, 5151101197, 61725107, 51572128, 21403109, 61725402
• RG
  Research Grants Council, University Grants Committee

  Award: 5151101197
• GO
  Government of Jiangsu Province
• NS
  Natural Science Foundation of Jiangsu Province

  Award: BK20140769
• PA
  Priority Academic Program Development of Jiangsu Higher Education Institutions
• NK
  National Key Research and Development Program of China

  Awards: 2016YFA0202301, 2014CB931702
• FR
  Fundamental Research Funds for the Central Universities

  Award: 30916015106
• NS
  National Science Fund for Distinguished Young Scholars

  Award: 61725402