MoS 2 Quantum Dot Growth Induced by S Vacancies in a ZnIn 2 S 4 Monolayer: Atomic-Level Heterostructure for Photocatalytic Hydrogen Production
Hunan University · State Key Laboratory of Chemobiosensing and Chemometrics · +2 more institutions
Abstract
It is highly demanded to steer the charge flow in photocatalysts for efficient photocatalytic hydrogen reactions (PHRs). In this study, we developed a smart strategy to position MoS2 quantum dots (QDs) at the S vacancies on a Zn facet in monolayered ZnIn2S4 (Vs-M-ZnIn2S4) to craft a two-dimensional (2D) atomic-level heterostructure (MoS2QDs@Vs-M-ZnIn2S4). The electronic structure calculations indicated that the positive charge density of the Zn atom around the sulfur vacancy (Vs) was more intensive than other Zn atoms. The Vs confined in monolayered ZnIn2S4 established an important link between the electronic manipulation and activities of ZnIn2S4. The Vs acted as electron traps, prevented vertical…
Citation impact
- FWCI
- 11.46
- Percentile
- 100%
- References
- 38
Authors
11- SZShuqu ZhangCorresponding
Hunan University, State Key Laboratory of Chemobiosensing and Chemometrics
- XLXia Liu
Xiangtan University
- CLChengbin Liu
Hunan University, State Key Laboratory of Chemobiosensing and Chemometrics
- SLShenglian Luo
Nanchang Hangkong University
- LWLonglu Wang
Hunan University, State Key Laboratory of Chemobiosensing and Chemometrics
Topics & keywords
- Heterojunction
- Materials science
- Quantum dot
- Vacancy defect
- Electron
- Photocatalysis
- Electronic structure
- Atom (system on chip)