AlScN: A III-V semiconductor based ferroelectric
Hochschule für Angewandte Wissenschaften Kiel · Fraunhofer Institute for Silicon Technology
Abstract
Ferroelectric switching is unambiguously demonstrated for the first time in a III-V semiconductor based material: Al1-xScxN—A discovery which could help to satisfy the urgent demand for thin film ferroelectrics with high performance and good technological compatibility with generic semiconductor technology which arises from a multitude of memory, micro/nano-actuator, and emerging applications based on controlling electrical polarization. The appearance of ferroelectricity in Al1-xScxN can be related to the continuous distortion of the original wurtzite-type crystal structure towards a layered-hexagonal structure with increasing Sc content and tensile strain, which is expected to be extendable to other…
Citation impact
- FWCI
- 21.23
- Percentile
- 100%
- References
- 51
Authors
5- SFSimon FichtnerCorresponding
Hochschule für Angewandte Wissenschaften Kiel, Fraunhofer Institute for Silicon Technology
- NWNiklas Wolff
Hochschule für Angewandte Wissenschaften Kiel, Fraunhofer Institute for Silicon Technology
- FLFabian Lofink
Hochschule für Angewandte Wissenschaften Kiel, Fraunhofer Institute for Silicon Technology
- LKLorenz Kienle
Hochschule für Angewandte Wissenschaften Kiel, Fraunhofer Institute for Silicon Technology
- BWBernhard Wagner
Hochschule für Angewandte Wissenschaften Kiel, Fraunhofer Institute for Silicon Technology
Topics & keywords
- Ferroelectricity
- Semiconductor
- Materials science
- Optoelectronics
- Condensed matter physics
- Engineering physics
- Physics
- Dielectric