Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet      MnBi    2      Te    4      Films

Otrokov, M. M.; Rusinov, I. P.; Blanco-Rey, M.; Hoffmann, Martin; Vyazovskaya, A. Yu.; Eremeev, S. V.; Ernst, A.; Echenique, P. M.; Arnau, A.; Chulkov, Eugene V.

doi:10.1103/physrevlett.122.107202

articlePhysical Review LettersMar 13, 2019LVHYBRID OA

Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi 2 Te 4 Films

MMM. M. Otrokov IPI. P. Rusinov MBM. Blanco-Rey MHMartin Hoffmann AYA. Yu. Vyazovskaya

Material Physics Center · Ikerbasque · +6 more institutions

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Indexed inarxivcrossrefpubmed

Abstract

Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering MnBi_{2}Te_{4} as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of MnBi_{2}Te_{4} is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide band gap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, MnBi_{2}Te_{4} is the first…

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Topics & keywords

Topics

Keywords

van der Waals force
Antiferromagnetism
Condensed matter physics
Plateau (mathematics)
Quantum Monte Carlo
Materials science
Physics
Monte Carlo method

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