Evidence of a gate-tunable Mott insulator in a trilayer graphene moiré superlattice
GCGuorui ChenLJLili JiangSWShuang WuBLBosai LyuHLHongyuan Li
Fudan University · Collaborative Innovation Center of Advanced Microstructures · +7 more institutions
Indexed inarxivcrossref
Abstract
No abstract available for this paper.
Citation impact
557
total citations
- FWCI
- 50.47
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- 100%
- References
- 29
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Authors
12- GCGuorui ChenCorresponding
Fudan University, Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics, University of California, Berkeley
- LJLili Jiang
University of California, Berkeley
- SWShuang Wu
University of California, Berkeley
- BLBosai Lyu
Shanghai Jiao Tong University, Collaborative Innovation Center of Advanced Microstructures
- HLHongyuan Li
Shanghai Jiao Tong University, Collaborative Innovation Center of Advanced Microstructures
Topics & keywords
Topics
Keywords
- Mott insulator
- Superlattice
- Heterojunction
- Coulomb
- Band gap
- Mott transition
- Electron
- Graphene
No related works found for this paper.
Funding
- NSNational Science FoundationAwards: 11527805, U1732274, 11425415
- NNNational Natural Science Foundation of ChinaAwards: 11425415, 11527805, U1732274, 2016YFA0300703
- MUMultidisciplinary University Research InitiativeAward: W911NF-15-1-0447
- OOOffice of Naval ResearchAwards: N00014-15-1-2651, N00014
- ARArmy Research OfficeAwards: W911NF-15-1-0447, W911NF-15-1-, W911NF