An Oxide Schottky Junction Artificial Optoelectronic Synapse
Chinese Academy of Sciences · Ningbo Institute of Industrial Technology
Abstract
The rapid development of artificial intelligence techniques and future advanced robot systems sparks emergent demand on the accurate perception and understanding of the external environments via visual sensing systems that can co-locate the self-adaptive detecting, processing, and memorizing of optical signals. In this contribution, a simple indium–tin oxide/Nb-doped SrTiO3 (ITO/Nb:SrTiO3) heterojunction artificial optoelectronic synapse is proposed and demonstrated. Through the light and electric field co-modulation of the Schottky barrier profile at the ITO/Nb:SrTiO3 interface, the oxide heterojunction device can respond to the entire visible light region in a neuromorphic manner, allowing synaptic…
Citation impact
- FWCI
- 24.82
- Percentile
- 100%
- References
- 55
Authors
10- SGShuang Gao
Chinese Academy of Sciences, Ningbo Institute of Industrial Technology
- GLGang LiuCorresponding
Chinese Academy of Sciences, Ningbo Institute of Industrial Technology
- HYHuali Yang
Chinese Academy of Sciences, Ningbo Institute of Industrial Technology
- CHChao Hu
Chinese Academy of Sciences, Ningbo Institute of Industrial Technology
- QCQi Chen
Chinese Academy of Sciences, Ningbo Institute of Industrial Technology
Topics & keywords
- Materials science
- Oxide
- Optoelectronics
- Schottky barrier
- Synapse
- Graphene
- Nanotechnology
- Neuroscience
Funding
- NNNational Natural Science Foundation of ChinaAwards: 61704178, 61722407, 11474295, 61504154, 61674153, 61774161, 51525103
- MOMinistry of Science and Technology of the People's Republic of ChinaAward: 2017YFB0405604
- NSNatural Science Foundation of NingboAwards: 2018A610020, 2017A610093
- SAScience and Technology Department of Zhejiang ProvinceAward: 2017C31100
- NSNatural Science Foundation of Zhejiang ProvinceAward: LR17E020001