Interface and Defect Engineering for Metal Halide Perovskite Optoelectronic Devices
California NanoSystems Institute · University of California, Los Angeles
Abstract
Metal halide perovskites have been in the limelight in recent years due to their enormous potential for use in optoelectronic devices, owing to their unique combination of properties, such as high absorption coefficient, long charge-carrier diffusion lengths, and high defect tolerance. Perovskite-based solar cells and light-emitting diodes (LEDs) have achieved remarkable breakthroughs in a comparatively short amount of time. As of writing, a certified power conversion efficiency of 22.7% and an external quantum efficiency of over 10% have been achieved for perovskite solar cells and LEDs, respectively. Interfaces and defects have a critical influence on the properties and operational stability of metal halide…
Citation impact
- FWCI
- 29.06
- Percentile
- 100%
- References
- 249
Authors
6- THTae Hee Han
California NanoSystems Institute, University of California, Los Angeles
- STShaun Tan
California NanoSystems Institute, University of California, Los Angeles
- JXJingjing Xue
California NanoSystems Institute, University of California, Los Angeles
- LMLei Meng
California NanoSystems Institute, University of California, Los Angeles
- JLJin‐Wook LeeCorresponding
California NanoSystems Institute, University of California, Los Angeles
Topics & keywords
- Perovskite (structure)
- Materials science
- Halide
- Optoelectronics
- Light-emitting diode
- Diode
- Trihalide
- Solar cell
- Affordable and clean energy