C 3 N 5 : A Low Bandgap Semiconductor Containing an Azo-Linked Carbon Nitride Framework for Photocatalytic, Photovoltaic and Adsorbent Applications

Modification of carbon nitride based polymeric 2D materials for tailoring their optical, electronic and chemical properties for various applications has gained significant interest. The present report demonstrates the synthesis of a novel modified carbon nitride framework with a remarkable 3:5 C:N stoichiometry (C3N5) and an electronic bandgap of 1.76 eV, by thermal deammoniation of the melem hydrazine precursor. Characterization revealed that in the C3N5 polymer, two s-heptazine units are bridged together with azo linkage, which constitutes an entirely new and different bonding fashion from g-C3N4 where three heptazine units are linked together with tertiary nitrogen. Extended conjugation due to overlap of…

• CM
  CMC Microsystems
• AI
  Alberta Innovates - Technology Futures

  Award: URSI 10032SEG
• UO
  University of Alberta
• AI
  Alberta Innovates
• CF
  Canada First Research Excellence Fund

  Award: T12-P02
• NS
  Natural Sciences and Engineering Research Council of Canada

  Award: 06630
• NR
  National Research Council Canada

  Award: NI 014009