MoS 2 -Based Optoelectronic Gas Sensor with Sub-parts-per-billion Limit of NO 2 Gas Detection

Red light illumination with photon energy matching the direct band gap of chemical vapor deposition grown single-layer MoS2 with Au metal electrodes was used to induce a photocurrent which was employed instead of dark current for NO2 gas sensing. The resulting Au/MoS2/Au optoelectronic gas sensor showed a significant enhancement of the device sensitivity S toward ppb level of NO2 gas exposure reaching S = 4.9%/ppb (4900%/ppm), where S is a slope of dependence of relative change of the sensor resistance on NO2 concentration. Further optimization of the MoS2-based optoelectronic gas sensor by using graphene (Gr) with a work function lower than that of Au for the electrical contacts to the MoS2 channel allowed an…

• UO
  University of California, Riverside

  Award: POC2930
• KI
  Korea Institute of Materials Science

  Award: POC2930
• DO
  Division of Chemical, Bioengineering, Environmental, and Transport Systems

  Award: 1842718
• DO
  Division of Electrical, Communications and Cyber Systems

  Award: 1404671