Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit
Hong Kong Polytechnic University · Sun Yat-sen University · +1 more institution
Abstract
Abstract Ferroelectrics allow for a wide range of intriguing applications. However, maintaining ferroelectricity has been hampered by intrinsic depolarization effects. Here, by combining first-principles calculations and experimental studies, we report on the discovery of robust room-temperature out-of-plane ferroelectricity which is realized in the thinnest monolayer MoTe 2 with unexploited distorted 1T ( d 1T) phase. The origin of the ferroelectricity in d 1T-MoTe 2 results from the spontaneous symmetry breaking due to the relative atomic displacements of Mo atoms and Te atoms. Furthermore, a large ON/OFF resistance ratio is achieved in ferroelectric devices composed of MoTe 2 -based van der Waals…
Citation impact
- FWCI
- 18.72
- Percentile
- 100%
- References
- 33
Authors
7Topics & keywords
- Ferroelectricity
- Monolayer
- Condensed matter physics
- Atomic units
- van der Waals force
- Materials science
- Heterojunction
- Nanotechnology