Multilayered PdSe 2 /Perovskite Schottky Junction for Fast, Self‐Powered, Polarization‐Sensitive, Broadband Photodetectors, and Image Sensor Application

Abstract Group‐10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self‐powered photodetector is developed with broadband response ranging from deep ultraviolet to near‐infrared by combining FA 1− x Cs x PbI 3 perovskite with PdSe 2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as‐assembled PdSe 2 /perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at ≈800 nm. The device also shows a large on/off ratio of ≈10 4 , a high responsivity ( R ) of 313 mA W −1 , a…

• NN
  National Natural Science Foundation of China

  Awards: 61605174, 1-ZVGH
• RG
  Research Grants Council, University Grants Committee

  Award: GRF 152093/18E PolyU B‐Q65N
• HK
  Hong Kong Polytechnic University

  Awards: 1-ZVGH, B-Q65N, 152093/18E