Divalent europium-doped near-infrared-emitting phosphor for light-emitting diodes
South China University of Technology · University of Science and Technology Beijing
Abstract
Abstract Near-infrared luminescent materials exhibit unique photophysical properties that make them crucial components in photonic, optoelectronic and biological applications. As broadband near infrared phosphors activated by transition metal elements are already widely reported, there is a challenge for next-generation materials discovery by introducing rare earth activators with 4 f -5 d transition. Here, we report an unprecedented phosphor K 3 LuSi 2 O 7 :Eu 2+ that gives an emission band centered at 740 nm with a full-width at half maximum of 160 nm upon 460 nm blue light excitation. Combined structural and spectral characterizations reveal a selective site occupation of divalent europium in LuO 6 and K2O…
Citation impact
- FWCI
- 22.57
- Percentile
- 100%
- References
- 41
Authors
5- JQJianwei QiaoCorresponding
South China University of Technology, University of Science and Technology Beijing
- GZGuojun Zhou
South China University of Technology, University of Science and Technology Beijing
- YZYayun Zhou
South China University of Technology
- QZQinyuan Zhang
South China University of Technology
- ZXZhiguo Xia
South China University of Technology, University of Science and Technology Beijing
Topics & keywords
- Phosphor
- Europium
- Infrared
- Materials science
- Light-emitting diode
- Luminescence
- Optoelectronics
- Doping