Wide Band Gap Chalcogenide Semiconductors
National Laboratory of the Rockies · Lawrence Berkeley National Laboratory · +2 more institutions
Abstract
Wide band gap semiconductors are essential for today’s electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In–Ga–Zn–O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., γ-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap…
Citation impact
- FWCI
- 23.41
- Percentile
- 100%
- References
- 510
Authors
7- RWRachel Woods-Robinson
National Laboratory of the Rockies, Lawrence Berkeley National Laboratory, University of California, Berkeley
- YHYanbing Han
National Laboratory of the Rockies, Zhengzhou University
- HZHanyu Zhang
National Laboratory of the Rockies
- TATursun Ablekim
National Laboratory of the Rockies
- IKImran Khan
National Laboratory of the Rockies
Topics & keywords
- Band gap
- Semiconductor
- Chalcogenide
- Wide-bandgap semiconductor
- Multiple exciton generation
- Photovoltaics
- Semimetal
- Cadmium telluride photovoltaics