articleChemical ReviewsApr 6, 2020GREEN OA

Wide Band Gap Chalcogenide Semiconductors

RWRachel Woods-RobinsonYHYanbing HanHZHanyu ZhangTATursun AblekimIKImran Khan

National Laboratory of the Rockies · Lawrence Berkeley National Laboratory · +2 more institutions

PubMed
Indexed inarxivcrossrefpubmed

Abstract

Wide band gap semiconductors are essential for today’s electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In–Ga–Zn–O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., γ-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap…

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487
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Authors

7
  • RW
    Rachel Woods-Robinson

    National Laboratory of the Rockies, Lawrence Berkeley National Laboratory, University of California, Berkeley

  • YH
    Yanbing Han

    National Laboratory of the Rockies, Zhengzhou University

  • HZ
    Hanyu Zhang

    National Laboratory of the Rockies

  • TA
    Tursun Ablekim

    National Laboratory of the Rockies

  • IK
    Imran Khan

    National Laboratory of the Rockies

Topics & keywords

Keywords
  • Band gap
  • Semiconductor
  • Chalcogenide
  • Wide-bandgap semiconductor
  • Multiple exciton generation
  • Photovoltaics
  • Semimetal
  • Cadmium telluride photovoltaics
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