Recent progress on the electronic structure, defect, and doping properties of Ga2O3

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high breakdown field of 8 MV/cm, and high thermal stability. These properties enable Ga2O3 a promising material for a large range of applications, such as high power electronic devices and solar-blind ultraviolet (UV) photodetectors. In the past few years, a significant process has been made for the growth of high-quality bulk crystals and thin films and device optimizations for power electronics and solar blind UV detection. However, many challenges remain, including the difficulty in p-type doping, a large density of unintentional electron carriers and…

• QU
  Queensland University of Technology
• NN
  National Natural Science Foundation of China

  Awards: 21872116, 51972160
• AR
  Australian Research Council

  Award: FT160100207