Insulators for 2D nanoelectronics: the gap to bridge

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline…

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  Alexander von Humboldt-Stiftung

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  Graphene Flagship

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  Deutsche Forschungsgemeinschaft

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  Russian Foundation for Basic Research

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  Austrian Science Fund

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  State Administration of Foreign Experts Affairs
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  Technische Universität Wien
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  Priority Academic Program Development of Jiangsu Higher Education Institutions

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  Ioffe Institute
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  Horizon 2020 Framework Programme

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