Chemical vapor deposition of layered two-dimensional MoSi  2  N  4  materials

Hong, Yilun; Liu, Zhibo; Wang, Lei; Zhou, Tianya; Ma, Wei; Xu, Chuan; Feng, Shun; Chen, Long; Chen, Maolin; Sun, Dongming; Chen, Xing‐Qiu; Cheng, Hui–Ming; Ren, Wencai

doi:10.1126/science.abb7023

articleScienceAug 7, 2020GREEN OA

Chemical vapor deposition of layered two-dimensional MoSi 2 N 4 materials

YHYilun Hong ZLZhibo Liu LWLei Wang TZTianya Zhou WMWei Ma

University of Science and Technology of China · Chinese Academy of Sciences · +4 more institutions

PubMed

Indexed incrossrefpubmed

Abstract

Stabilizing monolayer nitrides with silicon Transition metal carbides and nitrides are nonlayered materials that in monolayer form have potentially useful electronic and chemical properties. These monolayers are usually made by chemical etching that produces flakes with surface defects that have poor air and water stability. Hong et al. report that introducing silicon during chemical vapor deposition growth of molybdenum nitride passivates the surface and prevents island formation. Centimeter-scale monolayer films of the semiconductor MoSi 2 N 4 form as a MoN 2 layer sandwiched by two Si-N bilayers. These layers possess high mechanical strength and ambient stability. Science , this issue p. 670

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Keywords

Chemical vapor deposition
Materials science
Deposition (geology)
Chemical engineering
Mineralogy
Chemistry
Nanotechnology
Geology

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