Magnetoresistive Random Access Memory
Samsung (United States) · Centre National de la Recherche Scientifique · +6 more institutions
Abstract
In this paper, a review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on spin-transfer torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.
Citation impact
- FWCI
- 29.95
- Percentile
- 100%
- References
- 127
Authors
3- DADmytro ApalkovCorresponding
Samsung (United States)
- BDB. Diény
Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Institut Nanosciences et Cryogénie, Spintronique et Technologie des Composants, Université Grenoble Alpes
- JMJ. M. Slaughter
Everspin Technologies (United States)
Topics & keywords
- Magnetoresistive random-access memory
- Spin-transfer torque
- Focus (optics)
- Magnetoresistance
- Random access memory
- Electrical engineering
- Computer science
- Engineering physics