articleNatureJan 12, 2022Closed access

A crossbar array of magnetoresistive memory devices for in-memory computing

SJSeungchul JungHLHyungwoo LeeSMSungmeen MyungHKHyunsoo KimSKSeung Keun Yoon

Samsung (South Korea) · Harvard University

PubMed
Indexed incrossrefpubmed

Abstract

No abstract available for this paper.

Citation impact

589
total citations
FWCI
50.22
Percentile
100%
References
45
Citations per year

Authors

19

Topics & keywords

Topics
Keywords
  • Crossbar switch
  • Computer science
  • Magnetoresistive random-access memory
  • Resistive random-access memory
  • Neuromorphic engineering
  • Computer hardware
  • Artificial neural network
  • Electrical engineering
UN Sustainable Development Goals
  • Affordable and clean energy
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