β-Gallium oxide power electronics
Wright-Patterson Air Force Base · University of California, Santa Barbara · +11 more institutions
Abstract
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Due to the favorable intrinsic material properties of gallium oxide, namely, critical field strength, widely tunable conductivity, mobility, and melt-based bulk growth, the major targeted application space is power electronics where high performance is expected at low cost. This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of…
Citation impact
- FWCI
- 27.22
- Percentile
- 100%
- References
- 197
Authors
34Topics & keywords
- Microelectronics
- Materials science
- Electronics
- Nanotechnology
- Gallium
- Semiconductor
- Engineering physics
- Gallium oxide
- Industry, innovation and infrastructure