High-performance inorganic metal halide perovskite transistors
Pohang University of Science and Technology · Linköping University · +2 more institutions
Abstract
Abstract The p-type characteristic of solution-processed metal halide perovskite transistors means that they could be used in combination with their n-type counterparts, such as indium–gallium–zinc-oxide transistors, to create complementary metal–oxide–semiconductor-like circuits. However, the performance and stability of perovskite-based transistors do not yet match their n-type counterparts, which limit their broader application. Here we report high-performance p-channel perovskite thin-film transistors based on inorganic caesium tin triiodide semiconducting layers that have moderate hole concentrations and high Hall mobilities. The perovskite channels are formed by engineering the film composition and…
Citation impact
- FWCI
- 23.63
- Percentile
- 100%
- References
- 49
Authors
7- ALAo Liu
Pohang University of Science and Technology
- HZHuihui Zhu
Pohang University of Science and Technology
- SBSai Bai
Linköping University, University of Electronic Science and Technology of China
- YRYoujin Reo
Pohang University of Science and Technology
- TZTaoyu Zou
Pohang University of Science and Technology
Topics & keywords
- Perovskite (structure)
- Materials science
- Halide
- Transistor
- Triiodide
- Tin
- Thin-film transistor
- Inorganic chemistry