Anion‐Doping‐Induced Vacancy Engineering of Cobalt Sulfoselenide for Boosting Electromagnetic Wave Absorption
Northwestern Polytechnical University
Abstract
Abstract Vacancy engineering is an attractive approach to modulate the electronic structure of transition metal chalcogens. However, illustrating how anion vacancy can be engineered to tailor their electromagnetic (EM) parameters and electromagnetic wave (EMW) absorption, based on clear vacancy concentrations and/or various anion vacancies rather than semiempirical rules, is currently lacking but significantly desired. An anion‐doping‐induced vacancy engineering is pioneered, where the selective oxidation process upgrades the transformation from Co‐based precursor to S‐doped CoSe 2 (System II) instead of Se‐doped CoS 2 (System I) in the subsequent sulfuration/selenization, which results in vacancy level…
Citation impact
- FWCI
- 14.74
- Percentile
- 100%
- References
- 47
Authors
3Topics & keywords
- Vacancy defect
- Materials science
- Doping
- Ion
- Cobalt
- Sulfur
- Chalcogen
- Chemical physics