In Situ Fabrication of PdSe 2 /GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio

Polarization-sensitive ultraviolet (UV) photodetection is of great technological importance for both civilian and military applications. Two-dimensional (2D) group-10 transition-metal dichalcogenides (TMDs), especially palladium diselenide (PdSe2), are promising candidates for polarized photodetection due to their low-symmetric crystal structure. However, the lack of an efficient heterostructure severely restricts their applications in UV-polarized photodetection. Here, we develop a PdSe2/GaN Schottky junction by in situ van der Waals growth for highly polarization-sensitive UV photodetection. Owing to the high-quality junction, the device exhibits an appealing UV detection performance in terms of a large…

• NN
  National Natural Science Foundation of China

  Awards: U2004165, 11974016, 51973147, 91833303, 51821002
• NS
  Natural Science Foundation of Henan Province

  Award: 202300410376