Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing
ETH Zurich · Swiss Federal Laboratories for Materials Science and Technology · +3 more institutions
Abstract
Abstract Many in-memory computing frameworks demand electronic devices with specific switching characteristics to achieve the desired level of computational complexity. Existing memristive devices cannot be reconfigured to meet the diverse volatile and non-volatile switching requirements, and hence rely on tailored material designs specific to the targeted application, limiting their universality. “Reconfigurable memristors” that combine both ionic diffusive and drift mechanisms could address these limitations, but they remain elusive. Here we present a reconfigurable halide perovskite nanocrystal memristor that achieves on-demand switching between diffusive/volatile and drift/non-volatile modes by…
Citation impact
- FWCI
- 23.63
- Percentile
- 100%
- References
- 78
Authors
16- RARohit Abraham JohnCorresponding
ETH Zurich, Swiss Federal Laboratories for Materials Science and Technology
- YDYiğit Demirağ
University of Zurich, ETH Zurich
- YSYevhen Shynkarenko
ETH Zurich, Swiss Federal Laboratories for Materials Science and Technology
- YBYuliia Berezovska
ETH Zurich, Swiss Federal Laboratories for Materials Science and Technology
- NONatacha Ohannessian
Paul Scherrer Institute, ETH Zurich
Topics & keywords
- Memristor
- Neuromorphic engineering
- Nanocrystal
- Perovskite (structure)
- Non-volatile memory
- Computer science
- Halide
- Materials science