Interfacial ferroelectricity in marginally twisted 2D semiconductors

Weston, Astrid; Castanon, Eli G.; Enaldiev, V. V.; Ferreira, F.; Bhattacharjee, Shubhadeep; Xu, Shuigang; Corte‐León, Héctor; Wu, Zefei; Clark, Nick; Summerfield, Alex; Hashimoto, Teruo; Gao, Yunze; Wang, Wendong; Hamer, Matthew J.; Read, Harriet; Fumagalli, Laura; Kretinin, Andrey V.; Haigh, Sarah J.; Kazakova, Olga; Geǐm, A. K.; Fal’ko, Vladimir I.; Gorbachev, Roman

doi:10.1038/s41565-022-01072-w

articleNature NanotechnologyFeb 24, 2022HYBRID OA

Interfacial ferroelectricity in marginally twisted 2D semiconductors

AWAstrid Weston EGEli G. Castanon VVV. V. Enaldiev FFF. Ferreira SBShubhadeep Bhattacharjee

University of Manchester · Henry Royce Institute · +2 more institutions

PubMed

Indexed inarxivcrossrefpubmed

Abstract

Abstract Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS 2 . These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarization arranged into a twist-controlled network. The last can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The observed interfacial charge transfer, movement of…

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Topics & keywords

Topics

Keywords

Ferroelectricity
Condensed matter physics
Semiconductor
Heterojunction
Materials science
van der Waals force
Polarization (electrochemistry)
Optoelectronics

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