Hafnium Oxide (HfO 2 ) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Pohang University of Science and Technology · Czech Academy of Sciences · +2 more institutions
Abstract
Abstract Hafnium oxide (HfO 2 ) is one of the mature high‐k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO 2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO 2 equip the former to achieve superlative performance with high‐speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO 2 domains are further discussed, which can unleash the ferroelectric properties in memory…
Citation impact
- FWCI
- 20.40
- Percentile
- 100%
- References
- 436
Authors
3- WBWritam BanerjeeCorresponding
Pohang University of Science and Technology
- AKAlireza KashirCorresponding
Czech Academy of Sciences, FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic, Institute of Physics of the Slovak Academy of Sciences
- SKS. Kamba
Czech Academy of Sciences, FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic, Institute of Physics of the Slovak Academy of Sciences
Topics & keywords
- Resistive random-access memory
- Non-volatile memory
- Materials science
- Flash memory
- Ferroelectricity
- Dielectric
- Hafnium
- Optoelectronics
- Affordable and clean energy