Ultra-wide bandgap semiconductor Ga2O3 power diodes
Xidian University · Shanghai Jiao Tong University · +2 more institutions
Abstract
Abstract Ultra-wide bandgap semiconductor Ga 2 O 3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga 2 O 3 material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga 2 O 3 heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga 2 O 3 , bipolar transport can induce conductivity modulation and low resistance in a low…
Citation impact
- FWCI
- 32.89
- Percentile
- 100%
- References
- 56
Authors
13Topics & keywords
- Figure of merit
- Optoelectronics
- Diode
- Materials science
- Doping
- Band gap
- Semiconductor
- Breakdown voltage
- Affordable and clean energy