Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor
East China Normal University · Shanghai Dianji University · +1 more institution
Abstract
Two-dimensional (2D) van-der-Waals (vdW) layered ferroelectric semiconductors are highly desired for in-memory computing and ferroelectric photovoltaics or detectors. Beneficial from the weak interlayer vdW-force, controlling the structure by interlayer twist/translation or doping is an effective strategy to manipulate the fundamental properties of 2D-vdW semiconductors, which has contributed to the newly-emerging sliding ferroelectricity. Here, we report unconventional room-temperature ferroelectricity, both out-of-plane and in-plane, in vdW-layered γ-InSe semiconductor triggered by yttrium-doping (InSe:Y). We determine an effective piezoelectric constant of ∼7.5 pm/V for InSe:Y flakes with thickness of ∼50…
Citation impact
- FWCI
- 17.10
- Percentile
- 100%
- References
- 45
Authors
8Topics & keywords
- Ferroelectricity
- van der Waals force
- Materials science
- Semiconductor
- Condensed matter physics
- Piezoresponse force microscopy
- Heterojunction
- Doping
Funding
- NNNational Natural Science Foundation of ChinaAwards: 61790583, 52272006, 61974042, 61874043, 12134003, 12204170, 62274061
- SEShanghai Education Development FoundationAward: 2022YFA1402902
- SMShanghai Municipal Education CommissionAward: TP2019019
- SAScience and Technology Commission of Shanghai MunicipalityAward: TP2019019
- HUHunan University