A review of memristor: material and structure design, device performance, applications and prospects
Hubei University · West Pomeranian University of Technology
Abstract
With the booming growth of artificial intelligence (AI), the traditional von Neumann computing architecture based on complementary metal oxide semiconductor devices are facing memory wall and power wall. Memristor based in-memory computing can potentially overcome the current bottleneck of computer and achieve hardware breakthrough. In this review, the recent progress of memory devices in material and structure design, device performance and applications are summarized. Various resistive switching materials, including electrodes, binary oxides, perovskites, organics, and two-dimensional materials, are presented and their role in the memristor are discussed. Subsequently, the construction of shaped electrodes,…
Citation impact
- FWCI
- 32.28
- Percentile
- 100%
- References
- 228
Authors
7Topics & keywords
- Memristor
- Von Neumann architecture
- Bottleneck
- Computer science
- Resistive random-access memory
- Materials science
- Non-volatile memory
- Electronic engineering