Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction

Abstract The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics devices 1–5 . Thus, tunnelling magnetoresistance (TMR) is considered to be proportional to spin polarization at the interface 1 and, to date, has been studied primarily in ferromagnets. Here we report observation of TMR in an all-antiferromagnetic tunnel junction consisting of Mn 3 Sn/MgO/Mn 3 Sn (ref. 6 ). We measured a TMR ratio of around 2% at room temperature, which arises between the parallel and antiparallel configurations of the cluster…

• UO
  University of Tokyo
• JS
  Japan Society for the Promotion of Science

  Awards: 21H04437, CREST, 22H00290
• CR
  Core Research for Evolutional Science and Technology

  Awards: JPMJMI20A1, JPMJCR18T3
• PR
  Precursory Research for Embryonic Science and Technology

  Award: JPMJPR20L7
• JP
  JST-Mirai Program

  Award: JPMJMI20A1