Vertical organic electrochemical transistors for complementary circuits
Northwestern University · University of Electronic Science and Technology of China · +9 more institutions
Abstract
Abstract Organic electrochemical transistors (OECTs) and OECT-based circuitry offer great potential in bioelectronics, wearable electronics and artificial neuromorphic electronics because of their exceptionally low driving voltages (<1 V), low power consumption (<1 µW), high transconductances (>10 mS) and biocompatibility 1–5 . However, the successful realization of critical complementary logic OECTs is currently limited by temporal and/or operational instability, slow redox processes and/or switching, incompatibility with high-density monolithic integration and inferior n-type OECT performance 6–8 . Here we demonstrate p- and n-type vertical OECTs with balanced and ultra-high performance by blending…
Citation impact
- FWCI
- 38.38
- Percentile
- 100%
- References
- 63
Authors
21- WHWei HuangCorresponding
Northwestern University, University of Electronic Science and Technology of China
- JCJianhua Chen
Northwestern University, Yunnan University, Southern University of Science and Technology
- YYYao Yao
Northwestern University, Zhejiang University
- DZDing Zheng
Northwestern University
- XJXudong Ji
Northwestern University
Topics & keywords
- Bioelectronics
- Transistor
- Nanotechnology
- Materials science
- Electronics
- Neuromorphic engineering
- Organic electronics
- Optoelectronics
- Affordable and clean energy
Funding
- NSNational Science FoundationAwards: DMR-1720139, 2025633, 1720139, ECCS-2025633, NSF DMR-1720139, NSF ECCS-2025633, DE-AC02-06CH11357
- UDU.S. Department of EnergyAwards: AC02-06CH11357, 70NANB19H005, DE-AC02, 06CH11357, DE-AC02-06CH11357, DE-AC02-
- UDU.S. Department of CommerceAwards: 70NANB19H005, DE-AC02-06CH11357
- NUNorthwestern UniversityAwards: DE-AC02-06CH11357, DMR-1720139, NSF ECCS-2025633, ECCS-2025633, NSF DMR-1720139
- OOOffice of the Director of National Intelligence
- NNNational Natural Science Foundation of ChinaAwards: DMR-1720139, DE-AC02-06CH11357, 62273073, 21774055, U1830207
- SYSun Yat-sen University
- ZUZhejiang UniversityAward: DE-AC02-06CH11357
- UOUniversity of Electronic Science and Technology of China
- NINational Institute of Standards and TechnologyAwards: DE-AC02-06CH11357, 70NANB19H005
- OOOffice of ScienceAwards: DE-AC02-06CH11357, DE-AC02, 06CH11357, AC02-06CH11357
- OROak Ridge Institute for Science and Education
- ICIntelligence Community Postdoctoral Research Fellowship Program
- MRMaterials Research Science and Engineering Center, Harvard UniversityAwards: 1720139, DMR-1720139, NSF DMR-1720139
- NONIH Office of the Director
- DODivision of Materials ResearchAwards: DMR-1720139, NSF DMR-1720139, ECCS-2025633, DE-AC02-06CH11357, 1720139
- DODivision of Electrical, Communications and Cyber SystemsAwards: ECCS-2025633, NSF ECCS-2025633, 2025633
- CFCenter for Hierarchical Materials DesignAwards: DE-AC02-06CH11357, 70NANB19H005
- AFAir Force Office of Scientific ResearchAwards: FA9550-, 23RXCOR011, FA9550-22-1-0423, FA9550-18-1-0320, FA9550, DE-AC02-06CH11357
- ANArgonne National LaboratoryAwards: DE-AC02, 06CH11357, AC02-06CH11357