InAs-Al hybrid devices passing the topological gap protocol

Topological phases of matter can enable highly stable qubits with small footprints, fast gate times, and digital control. These hardware-protected qubits must be fabricated with a material combination in which a topological phase can reliably be induced. The challenge: disorder can destroy the topological phase and obscure its detection. This paper reports on devices with low enough disorder to pass the topological gap protocol, thereby demonstrating gapped topological superconductivity and paving the way for a new stable qubit.