Review of: "The changes in the width of the nano transistor channel due to the field effect of the gate around can cause undesirable changes and loss of mobility"
Renesas Electronics (United Kingdom)
Indexed incrossref
Abstract
Review of: "The changes in the width of the nano transistor channel due to the field effect of the gate around can cause undesirable changes and loss of mobility" Cita
Citation impact
468
total citations
- FWCI
- 58.32
- Percentile
- 100%
- References
- 17
Citations per year
Authors
1Topics & keywords
Topics
Keywords
- Nano-
- Field-effect transistor
- Channel (broadcasting)
- Materials science
- Transistor
- Optoelectronics
- Field (mathematics)
- Nanotechnology
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