New structure transistors for advanced technology node CMOS ICs
Chinese Academy of Sciences · Institute of Microelectronics · +1 more institution
Abstract
Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits (ICs) have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor (FinFET) and gate-all-around FET (GAAFET), more gate electrodes have been added to three-dimensional (3D) channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore's law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs (CFET), 3D stack (3DS) FETs and vertical-channel transistors…
Citation impact
- FWCI
- 24.72
- Percentile
- 100%
- References
- 97
Authors
4- QZQingzhu ZhangCorresponding
Chinese Academy of Sciences, Institute of Microelectronics
- YZYongkui Zhang
Chinese Academy of Sciences, Institute of Microelectronics
- YLYan-Na Luo
Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences
- HYHuaxiang Yin
Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences
Topics & keywords
- Transistor
- CMOS
- Node (physics)
- Materials science
- Field-effect transistor
- Integrated circuit
- MOSFET
- Electrical engineering